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Strong Growth Ahead for Epitaxial Substrate Suppliers
Volumes Growing over 160% by 2014
Boston, MA - July 20, 2010 – With GaAs HBT and pHEMT devices continuing to play a pivotal role in cellular radio terminals and a broad range of other markets, SI GaAs epitaxial substrates output is estimated to have increased 7% year-on-year in 2009 and is forecast to grow by 21% in 2010. The Strategy Analytics GaAs and Compound Semiconductor Technologies (GaAs) service report, “Markets for SI GaAs Epitaxial Substrates: 2009-2014,” projects continued growth in material output through 2014.
Overall SI GaAs epitaxial substrate volumes will grow at a CAAGR of 10% through 2014 and the market will approach $530 million. Both MOCVD (metal organic chemical vapor deposition) and MBE (molecular beam epitaxy) epitaxial substrates will continue to be used for the production of HBT (heterojunction bipolar transistor) and HEMT (high electron mobility transistor) devices.
“The interim slowdown did not result in any major paradigm shift in cellular handset radio technology with GaAs HBTs and pHEMTs central to next generation platforms,” noted Asif Anwar at Strategy Analytics. “Trends in the smartphone category in particular are playing out to our previously predictions with multi-mode, multi-band terminals driving up HBT and pHEMT content and the subsequent demand for epitaxial substrates.”
The report also highlights dynamics in the epitaxial substrate supply chain, noting in particular the growing strength of Taiwanese epitaxial substrate supplier, VPEC. Strategy Analytics estimates that VPEC’s output to the merchant market grew by over 57% year-on-year and the company accounted for 20% of merchant supply in 2009, while IQE maintained its status as the world’s leading merchant supplier of SI GaAs epitaxial substrates.
Press release contact
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